The construction of the plant of phase one completed in Optics Valley of China on Sept 28. [Photo provided to China Daily]
Construction of the plant of phase one of the National Memory Base Project was completed ahead of schedule in the East Lake High-tech Development Zone (Optics Valley of China) in Wuhan, Hubei province, on Sept 28.Project construction began on Dec 30 last year, jointly invested by the China Integrated Circuit Industry Investment Fund, the Hubei Provincial Integrated Circuit Industry Investment Fund, Hubei Science and Technology Investment Group and Tsinghua Unigroup.
Covering an area of 1,968 mu (131.2 hectares), phase one of the project required investment of 24 billion dollars, and consists of three 3D NAND Flash clean plants. The investment in core production plants and equipment surpasses 30,000 dollars per square meter.
The completed plant covers an area of 524,000 sq m and will be put into operation in 2018. Phase one is expected to produce 300,000 chips per month and an annual output value of 10 billion dollars.
Being able to independently produce integrated circuit memory devices, the project is of great significance in ensuring national information security.
Optics Valley of China is at present pushing forward the construction of the memory base project, and building an industrial cluster worth one trillion yuan ($150.3 billion) featuring chips, displays, and intelligent terminals.
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